1/6 preliminary data november 2000 this is preliminary data new product in development or undergoing evaluation. details are subject to change without notice. STB60NE03L-12 n-channel 30v - 0.009 w - 60a d 2 pak stripfet? power mosfet n typical r ds (on) = 0.009 w n avalanche rugged technology n 100% avalanche tested n repetetive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization n add suffix t4 for ordering in tape & reel description this power mosfet is the latest development of stmicroelectronics unique single feature size? strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n dc-dc & dc-ac converters n automotive environment type v dss r ds(on) i d STB60NE03L-12 30 v <0.012 w 60 a d 2 pak to-263 (suffixt4) 1 3 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 60 a i d drain current (continuos) at t c = 100c 42 a i dm ( ) drain current (pulsed) 240 a p tot total dissipation at t c = 25c 100 w derating factor 0.67 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c internal schematic diagram ( )pulse width limited by safe operating area (1)i sd [ 60 a, di/dt m 300a/ms, v dd [ v (br)dss , tj [ t jma
STB60NE03L-12 2/6 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic r thj-case r thj-amb r thc-sink t j thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose max max max 1.5 62.5 0.5 300 c/w c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 60 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 15 v) 150 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a v gs = 5 v i d = 30 a 0.009 0.012 0.018 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs =10 v 60 a symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds > i d(on) x r ds(on)max i d =30 a 20 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitances v ds = 25v f = 1 mhz v gs = 0 2200 570 200 2800 750 250 pf pf pf
3/6 STB60NE03L-12 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 30 a r g = 4.7 w v gs = 5 v (see test circuit, figure 3) 40 260 50 320 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v i d = 60 a v gs =5 v 35 18 13 45 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f t c off-voltage rise time fall time cross-over time v clamp = 24 v i d = 60 a r g = 4.7 w v gs = 5 v (inductive load, see fig.5) 35 120 175 50 160 230 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 60 240 a a v sd (*) forward on voltage i sd = 60 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =60 a di/dt = 100 a/s v dd = 24 v t j = 150 c (see test circuit, figure 5) 55 0.1 3.5 ns m c a electrical characteristics (continued) ..
STB60NE03L-12 4/6 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/6 STB60NE03L-12 d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o
STB60NE03L-12 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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